MRF7S21150HR3 MRF7S21150HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
?70
?10
1 10010
?40
?50
?30
?20
7th Order
5th Order
3rd Order
300
VDD
= 28 Vdc, I
DQ
= 1350 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO?TONE SPACING (MHz)
18010
VDD
= 28 Vdc, P
out
= 120 W (PEP), I
DQ
= 1350 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3?U
0
?20
?40
IM5?L
IMD, INTERMODULATION DISTORTION (dBc)
?60
?30
IM3?L
IM5?U
IM7?L
IM7?U
?50
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
?1
?3
?5
30
Actual
Ideal
0
?2
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
?3 dB = 72.73 W
20
40 50
60
15
45
40
35
30
25
η
D
,
DRAIN EFFICIENCY (%)
?1 dB = 39.58 W
?2 dB = 54.29 W
80
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
50
?65
?30
38 4240
?45
DPD Corrected
No Memory Correction
?50
?55
?60
ACPR, UPPER AND LOWER RESULTS (dBc)
44 46
Uncorrected, Upper and Lower
DPD Corrected
with Memory Correction
48
300
13
19
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 1350 mA
f = 2140 MHz
TC
= ?30
C
25C
85C
50
?30C
25C
85C
10
1
18
17
16
15
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
100
14
?40
?35
?60
?10
?4
70
20
VDD
= 28 Vdc, I
DQ
= 1350 mA, f = 2140 MHz
Single?Carrier W?CDMA, Input Signal
PAR = 7.5 dB, ACPR @ ±5 MHz Offset in
3.84 MHz, Integrated Bandwidth
VDD
= 28 Vdc, I
DQ
= 1350 mA
f = 2140 MHz, Input Signal PAR = 7.5 dB
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